Effects of nitrogen doping on the dissolution of oxygen precipitates in Czochralski silicon during rapid thermal annealing

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 715-719

  Wang, Hongjie ^a   Ma, Xiangyang ^a   Xu, Jin ^a   Yu, Xuegong ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SILICON; SILICON WAFERS; THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI SILICON; NITROGEN DOPING; OXYGEN PRECIPITATION; THERMAL HISTORY EFFECTS;

OXYGEN;

EID: 2942536008     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/009     Document Type: Article

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