Effect of rapid thermal annealing on oxygen precipitation behavior in silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3055-3062

  Akatsuka, Masanori ^a   Okui, Masahiko ^a   Morimoto, Nobuyuki ^a   Sueoka, Koji ^a  

^a Sumitomo Metal Industries Ltd   (Japan)

Author keywords

AOP; Oxide precipitate; Point defects; RTA; Silicon; Voronkov model

Indexed keywords

DEFECTS; OXYGEN; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

ANOMALOUS OXYGEN PRECIPITATION (AOP);

SILICON WAFERS;

EID: 0035328748     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3055     Document Type: Article

References (13)