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Volumn 74, Issue 12, 1999, Pages 1675-1676

Observation of change in shape of oxygen precipitates in high-temperature annealed silicon by transmission electron microscopy

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; HIGH TEMPERATURE OPERATIONS; OXYGEN; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032607135     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123651     Document Type: Article
Times cited : (5)

References (7)
  • 6
    • 85034182882 scopus 로고
    • edited by W. Murray Bullis and L. C. Kimerling, The Electrochemical Society, Pennington, NJ
    • J. Andrews, in Defects in Silicon, edited by W. Murray Bullis and L. C. Kimerling (The Electrochemical Society, Pennington, NJ, 1993), p. 133.
    • (1993) Defects in Silicon , pp. 133
    • Andrews, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.