Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6408-6414

  Romanowski, A ^a   Rozgonyi, G ^a   Tamatsuka, M ^b  

^a North Carolina State University   (United States)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DISSOLUTION; HIGH TEMPERATURE EFFECTS; HYDROGEN; MATHEMATICAL MODELS; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); REACTION KINETICS;

DEAL-GROVE MODEL; GATE OXIDE INTEGRITY (GOI); NONEQUILIBRIUM MODEL; TIME ZERO BREAKDOWN (TZBD);

SILICON WAFERS;

EID: 0032620708     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370144     Document Type: Article

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