Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 111-116

  Yang, Deren ^a   Wang, Hongjie ^a   Yu, Xuegong ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Czochralski Silicon; Nitrogen Doping; Oxygen Precipitation; Thermal Stability

Indexed keywords

AGGLOMERATION; ANNEALING; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; OXYGEN; PRECIPITATION (CHEMICAL); SOLUBILITY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

BULK MICRODEFECTS (BMD);

SILICON;

EID: 1642516021     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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