Design and integration of novel SCR-based devices for ESD protection in CMOS/BiCMOS technologies

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2682-2689

  Salcedo, Javier A ^a   Liou, Juin J ^a   Bernier, Joseph C ^b  

^a University of Central Florida   (United States)

^b KENNEDY SPACE CENTER   (United States)

Author keywords

Electrostatic discharge (ESD); High holding low voltage trigger silicon controlled rectifier (HH LVTSCR); Holding voltage; Latchup; Voltage snapback

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISCHARGES; ELECTRIC RECTIFIERS; ELECTROSTATIC DEVICES; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTROSTATIC DISCHARGE(ESD) PROTECTION; HIGH HOLDING VOLTAGE; LATCHUP; MULTIPLE-FINGER LAYOUT; SILICON CONTROLLED RECTIFIER (SCR); VOLTAGE SNAPBACK;

CMOS INTEGRATED CIRCUITS;

EID: 29244468025     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859662     Document Type: Article

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