Low-frequency noise parameter extraction in poly-Si thin-film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5844, Issue , 2005, Pages 200-207

  Nam, Hyungdo ^a   Yang, Hae Suk ^b   Lee, Jungil ^a,d   Chovet, Alain ^c   Szentpali, Bela ^d   Kim, Eunkyu ^e  

^a Korea Institute of Science and Technology   (South Korea)

^b Chung Ang University   (South Korea)

^c IMEP LAHC   (France)

^d Technical Physics and Material Science   (Hungary)

^e Hanyang University   (South Korea)

Author keywords

Grain boundary barrier height; Low frequency noise; Number fluctuation; Polycrystalline silicon thin film transistors; Thermal activation; Tunneling

Indexed keywords

GRAIN BOUNDARIES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS;

LOW FREQUENCY NOISE; NUMBER FLUCTUATION; THERMAL ACTIVATION;

POLYSILICON;

EID: 28544444832     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.609592     Document Type: Conference Paper

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