Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors

Applied Physics Letters

Volumn 76, Issue 1, 2000, Pages 118-120

  Angelis, C T ^a   Dimitriadis, C A ^a   Farmakis, F V ^b   Brini, J ^b   Kamarinos, G ^b   Gueorguiev, V K ^c   Ivanov, Tz E ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Grenoble INP Phelma   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000061329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125675     Document Type: Article

References (9)

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4. C. A. Dimitriadis, G. Kamarinos, J. Brini, E. K. Evangelou, and V. K. Gueorguiev, Appl. Phys. Lett. 74, 108 (1999).
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6. C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev, and Tz. E. Ivanov, J. Appl. Phys. 83, 1469 (1998).
7. J. W. Seto, J. Appl. Phys. 46, 5247 (1975).
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9. F. V. Farmakis, J. Brini, G. Kamarinos, C. T. Angelis, C. A. Dimitriadis, and M. Miyasaka, Proceedings of the 15th International Conference on Noise in Physical Systems and l/f Fluctuations, Hong Kong 1999, p. 457.