Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 459-466

  Pichon, L ^a   Mercha, A ^a   Carin, R ^a   Mohammed Brahim, T ^b   Bonnaud, O ^b   Helen, Y ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Distribution of defects; Excimer laser annealing; Meyer Neldel behavior; Solid phase crystallization; Subthreshold conduction; Thin film transistors

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTANCE; EXCIMER LASERS; GATES (TRANSISTOR); GRAIN BOUNDARIES; POLYSILICON; RAPID THERMAL ANNEALING; THERMAL EFFECTS;

SOLID PHASE CRYSTALLIZATION (SPC); THERMAL EMISSION;

THIN FILM TRANSISTORS;

EID: 0036533358     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00324-0     Document Type: Article

References (32)