DC and RF characteristics of Si0.8Ge0.2 pMOSFETs: Enhanced operation speed and low 1/f noise

ETRI Journal

Volumn 25, Issue 3, 2003, Pages 203-209

  Song, Young Joo ^a   Shim, Kyu Hwan ^a   Kang, Jin Young ^a   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; HOLE MOBILITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE; TRANSMISSION ELECTRON MICROSCOPY;

1 F NOISE; DRAIN INDUCED BARRIER LOWERING; ELECTRICAL STRESS;

MOSFET DEVICES;

EID: 0038236901     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.03.0102.0301     Document Type: Article

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