Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2578-2580

  Chen, Kun Ming ^a   Huang, Guo Wei ^a   Chiu, D Y ^a   Huang, Hsiang Jen ^b   Chang, Chun Yen ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; EPITAXY SYSTEMS; GE CONTENT; LOW-FREQUENCY NOISE; MOBILITY FLUCTUATIONS; POLYCRYSTALLINE; POTENTIAL BARRIER HEIGHT; SILICON GERMANIUM;

BORON; CARRIER MOBILITY; GRAIN BOUNDARIES; HETEROJUNCTION BIPOLAR TRANSISTORS; POLYSILICON; RESISTORS; THERMAL NOISE;

GERMANIUM;

EID: 79956045740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511815     Document Type: Article

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