Low-frequency noise of integrated poly-silicon resistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1180-1187

  Brederlow, R ^a   Weber, W ^a   Dahl, C ^a   Schmitt Landsiedel, D ^a   Thewes, R ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

1 f noise; Analog CMOS; Integrated resistors; Low frequency noise; Mixed signal CMOS; Noise; Poly silicon; RF CMOS

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DEPOSITION; POLYSILICON; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

CIRCUIT SIMULATION; POLYSILICON RESISTORS;

RESISTORS;

EID: 0035366366     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925245     Document Type: Article

References (16)

1. 1/f noise in polycrystalline silicon resistors
2. A model of 1/f noise in polysilicon resistors
3. An analytical model for 1/f noise in polycrystalline silicon thin films
4. A physically based model for low-frequency noise of poly-silicon resistors
5. 1/f-noise is no surface effect
6. Influence of fluorinated gate oxides on the low frequency noise of MOS transistors under analog operation
7. Transport properties of polycrystalline silicon films
8. Density of gap states of silicon grain boundaries determined by optical absorption
9. A model for conduction in polycrystalline silicon - Part I: Theory
10. Low frequency noise in MOS transistors - I theory
11. Flicker noise in metal semiconductor schottky barrier diodes due to multistep tunneling process
12. Explanation and quantitative model for the matching behavior of poly-silicon resistors
13. Fluctuations of the low frequency noise of MOS transistors and consequences for analog circuit modeling