Selective epitaxial growth of Ge quantum dots on patterned SiO 2 /Si(0 0 1) surfaces

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 134-138

  Nguyen, Lam H ^a   LeThanh, V ^b   Debarre D ^a   Yam, V ^a   Halbwax, M ^a   El Kurdi, M ^a   Bouchier, D ^a   Rosner, P ^c   Becker, M ^c   Benamara, M ^c   Strunk, H P ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CAMPUS DE LUMINY   (France)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Quantum dots (QDs); Selective epitaxial growth (SEG); SiO 2 Si windows

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; GERMANIUM; MULTILAYERS; OPTOELECTRONIC DEVICES; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICA; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SELECTIVE EPITAXIAL GROWTH (SEG);

SEMICONDUCTOR QUANTUM DOTS;

EID: 10744226961     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.081     Document Type: Conference Paper

References (13)

1. Schmidt O.G., Denker U., Eberl K., Kienzle O., Ernst F., Haug R.J. Appl. Phys. Lett. 77:2000;4341.
2. Yakimov A.I., Dvurechenskii A.V., Kirienko V.V., Nikiforov A.I. Appl. Phys. Lett. 80:2002;4783.
3. Nitta Y., Shibata M., Fujita K., Ichikawa M. Surf. Sci. Lett. 462:2000;L587.
4. Fujita K., Watanable H., Ichikawa M. Appl. Phys. Lett. 70:1997;2807.
5. Kim E.S., Usami N., Shiraki Y. Appl. Phys. Lett. 72:1998;1617.
6. Jin G., Liu J.L., Thomas S.G., Luo Y.H., Wang K.L., Nguyen B.-Y. Appl. Phys. Lett. 75:1999;2752.
7. Ishizaka A., Shiraki Y. J. Electrochem. Soc. 133:1986;666.
8. L.H. Nguyen, V. Le Thanh, D. Débarre, V. Yam, D. Bouchier, in: Proceeding of the E-MRS 2002, Strasbourg, France.
9. Jin G., Liu J.L., Wang K.L. Appl. Phys. Lett. 76:2000;3591.
10. Kitajima T., Liu B., Leone S.R. Appl. Phys. Lett. 80:2002;497.
11. Xie Q., Madhukar A., Chen P., Kobayashi N.P. Phys. Rev. Lett. 75:1995;2542.
12. Le Thanh V., Yam V., Boucaud P., Fortuna F., Ulysse C., Bouchier D., Vervoort L., Lourtioz J.M. Phys. Rev. B. 60:1999;5851.
13. Qin L., Teo K.L., Shen Z.X., Peng C.S., Zhou J.M. Phys. Rev. B. 64:2001;75312.