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Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 275-279

Correlations between electrical and optical properties for OMVPE InN

(5) Yamamoto, A a Sugita, K a Takatsuka, H a Hashimoto, A a Davydov, V Yu b

a UNIVERSITY OF FUKUI (Japan)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; ELECTRON DEVICES; ELECTRONIC PROPERTIES; FILM GROWTH; GROWTH KINETICS; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTODIODES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; THICK FILMS; THICKNESS MEASUREMENT;

ELECTRON DRIFT VELOCITY; EMISSION BAND;

INDIUM COMPOUNDS;

EID: 0346154896 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.11.082 Document Type: Conference Paper

Times cited : (40)

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