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Volumn 277, Issue 1-2, 1996, Pages 1-4
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Dielectric constants of Ta2O5 thin films deposited by r.f. sputtering
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Author keywords
Deposition process; Dielectrics; Sputtering; Tantalum
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Indexed keywords
ARGON;
CRYSTALLIZATION;
DIELECTRIC FILMS;
ELECTRON DIFFRACTION;
HEATING;
OXYGEN;
PERMITTIVITY;
SPUTTER DEPOSITION;
TANTALUM COMPOUNDS;
DIODE RADIO FREQUENCY SPUTTERING;
ELECTRON DIFFRACTION ANALYSIS;
ELECTRON DIFFRACTOGRAM;
SPUTTERING POWER;
TANTALUM OXIDE;
THIN FILMS;
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EID: 0030142692
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/0040-6090(95)08234-4 Document Type: Article |
Times cited : (50)
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References (7)
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