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Volumn 277, Issue 1-2, 1996, Pages 1-4

Dielectric constants of Ta2O5 thin films deposited by r.f. sputtering

Author keywords

Deposition process; Dielectrics; Sputtering; Tantalum

Indexed keywords

ARGON; CRYSTALLIZATION; DIELECTRIC FILMS; ELECTRON DIFFRACTION; HEATING; OXYGEN; PERMITTIVITY; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

EID: 0030142692     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08234-4     Document Type: Article
Times cited : (50)

References (7)
  • 1
    • 84957140546 scopus 로고
    • 5 thin film and application to SAW devices
    • 5 thin film and application to SAW devices, Jpn. J. App. Phys., 24, Supplement 24-3 (1989) 25-27.
    • (1989) Jpn. J. App. Phys. , vol.24 , Issue.SUPPLEMENT 24-3 , pp. 25-27
    • Nakagawa, Y.1    Gomi, Y.2    Suzuki, T.3
  • 4
    • 0028460096 scopus 로고
    • 5 thin film prepared by electron beam heating method
    • in Japanese
    • 5 thin film prepared by electron beam heating method, Trans. IEICE CII, J77-C-II(1) (1994-01) 10-15 (in Japanese).
    • (1994) Trans. IEICE CII , vol.J77-C-II , Issue.1 , pp. 10-15
    • Sekido, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.