Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 465-468

  Lu, H C ^a   Gusev, E ^a   Yasuda, N ^a   Green, M ^b   Alers, G ^b   Garfunkel, E ^a   Gustafsson, T ^a  

^a Laboratory for Surface Modification   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; NITRIDING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

HIGH RESOLUTION MEDIUM-ENERGY ION SCATTERING (MEIS); SILICON OXYNITRIDE;

SEMICONDUCTING FILMS;

EID: 0034299316     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00475-X     Document Type: Article

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