Plasma ion implantation of nitrogen into silicon: High resolution X-ray diffraction

Brazilian Journal of Physics

Volumn 29, Issue 4, 1999, Pages 768-770

  Beloto, A F ^a   Abramof, E ^a   Ueda, M ^a   Berni, L A ^a   Gomes, G F ^a,b  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033234761     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: 10.1590/S0103-97331999000400032     Document Type: Article

References (8)

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