Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 1, 2000, Pages 115-120

  Erlebacher, Jonah ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ARGON; CARRIER MOBILITY; INTERFACIAL ENERGY; ION BEAMS; IONS; MATHEMATICAL MODELS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SPECTROSCOPY; SPUTTERING; TEMPERATURE;

BRADLEY-HARPER SPUTTER RIPPLING MODEL; SPONTANEOUS PATTERNING; SURFACE ENERGY ANISOTROPY;

ION BOMBARDMENT;

EID: 0033692027     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582127     Document Type: Article

References (2)

1. T. M. Mayer, E. Chason, and A. J. Howard, J. Appl. Phys. 76, 1633 (1994).
2. S. Rusponi, C. Baragno, and U. Valbusa, Phys. Rev. Lett. 78, 2795 (1997).