Theory of surfaces and interfaces of group III-nitrides

Applied Surface Science

Volumn 159, Issue , 2000, Pages 355-359

  Neugebauer, J ^a   Zywietz, T ^a   Scheffler, M ^a   Northrup, J ^b  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; GIBBS FREE ENERGY; GRAIN BOUNDARIES; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMODYNAMIC STABILITY;

FIRST PRINCIPLE TOTAL ENERGY CALCULATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034205163     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00154-9     Document Type: Article

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