Nanostructure formation during ion-assisted growth of GaN by molecular beam epitaxy

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Cui, Bentao ^a   Cohen, P I ^a   Dabiran, A M ^b  

^a University of Minnesota   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION PROCESSES; ION-ASSISTED GROWTH; RIPPLE FORMATION; SURFACE MOBILITY;

AMMONIA; ARGON; ATOMIC FORCE MICROSCOPY; ION BEAMS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NITROGEN; PARAMETER ESTIMATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 20944436352     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897487     Document Type: Article

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