Glancing-angle ion enhanced surface diffusion on GaAs(001) during molecular beam epitaxy

Physical Review Letters

Volumn 86, Issue 2, 2001, Pages 260-263

  DeLuca, P M ^a   Ruthe, K C ^a   Barnett, S A ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT DENSITY; DIFFUSION; ION BEAM ASSISTED DEPOSITION; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

SPECULAR ION SCATTERING; TWO DIMENSIONAL ISLAND NUCLEATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035124561     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.260     Document Type: Article

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