Is ion sputtering always a `negative homoepitaxial deposition'?

Physical Review Letters

Volumn 86, Issue 5, 2001, Pages 838-841

  Costantini, G ^a,b   Buatier De Mongeot, F ^a   Boragno, C ^a   Valbusa, U ^a  

^a INFM   (Italy)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MORPHOLOGY; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SPUTTER DEPOSITION; THERMAL EFFECTS;

NEGATIVE HOMOEPITAXIAL DEPOSITIONS; VACANCIES;

SILVER;

EID: 0343408159     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.838     Document Type: Article

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