Radiation-induced donor generation in epitaxial and Cz diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 552, Issue 1-2, 2005, Pages 56-60

  Pintilie, I ^a   Buda, M ^a   Fretwurst, E ^b   Honniger F ^b   Lindstrom G ^b   Stahl, J ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Bistable donors; Proton irradiation; Radiation hardness; Silicon detector; TSC

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; PROTON IRRADIATION; PROTONS; RADIATION EFFECTS; SILICON;

BISTABLE DONORS; RADIATION HARDNESS; SILICON DETECTORS; TSC;

DIODES;

EID: 26444500515     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.006     Document Type: Conference Paper

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