Defect evolution in irradiated silicon detector material

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 374, Issue 1, 1996, Pages 12-26

  MacEvoy, B C ^a   Hall, G ^a   Gill, K ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); GAMMA RAYS; MATHEMATICAL MODELS; NEUTRON IRRADIATION; PHOSPHORUS; SILICON; VANADIUM COMPOUNDS;

ATOMIC DEFECTS; DEEP LEVEL ACCEPTOR STATES; DOPING CONCENTRATION; GAMMA IRRADIATION; HIGH RESISTIVITY DETECTOR MATERIAL; RADIATION TOLERANCE; THERMAL ANNEALING;

RADIATION DETECTORS;

EID: 0030149546     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)37410-X     Document Type: Article

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