Results on defects induced by 60Co gamma irradiation in standard and oxygen-enriched silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 514, Issue 1-3, 2003, Pages 18-24

  Pintilie, I ^a,b   Fretwurst, E ^b   Lindstrom G ^b   Stahl, J ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

60Co gamma irradiation; Point defects; Silicon detectors

Indexed keywords

CHEMICAL ACTIVATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; ENTHALPY; GAMMA RAYS; LEAKAGE CURRENTS; OXYGEN; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

RADIATION-INDUCED DEFECTS; THERMALLY STIMULATED CURRENTS;

SEMICONDUCTING SILICON;

EID: 0242413201     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.08.079     Document Type: Conference Paper

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