Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 514, Issue 1-3, 2003, Pages 1-8

  Fretwurst, E ^a   Lindstrom G ^a   Stahl, J ^a   Pintilie, I ^a,e   Li, Z ^b   Kierstead, J ^b   Verbitskaya, E ^c   Roder R ^d  

^a UNIVERSITY OF HAMBURG   (Germany)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d Micro Sensors GmbH   (Germany)

^e NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

60Co gamma radiation; Defects; Oxygen in silicon; Radiation damage; Silicon detectors

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DETECTORS; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; GAMMA RAYS; IRRADIATION; OXYGEN; RADIATION DAMAGE; RADIATION HARDENING;

REVERSE CURRENTS;

SEMICONDUCTING SILICON;

EID: 0242607813     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.08.077     Document Type: Conference Paper

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