Simulation of the kinetics of oxygen complexes in crystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 16, 2002, Pages 1652211-16522111

  Lee, Young Joo ^a   Von Boehm, J ^a   Nieminen, R M ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; OXYGEN; OZONE; SILICON;

AB INITIO CALCULATION; ARTICLE; CHEMICAL REACTION KINETICS; COMPLEX FORMATION; CRYSTAL; DIFFUSION; DISSOCIATION; ENERGY TRANSFER; MOLECULAR DYNAMICS; MOLECULAR MODEL; SIMULATION;

EID: 0037110174     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (42)

1. C. S. Fuller, J. A. Ditzenberger, N. B. Hannay, and E. Buehler, Phys. Rev. 96, 833 (1954).
2. V. Cazcarra and P. Zunino, J. Appl. Phys. 51, 4206 (1980).
3. H. Navarro, J. Griffin, J. Weber, and L. Genzel, Solid State Commun. 58, 151 (1986).
4. P. Wagner and J. Hage, Appl. Phys. A: Solids Surf. A49, 123 (1989).
5. Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic, Dordrecht, The Netherlands, 1996).
6. C. A. J. Ammerlaan. in Properties of Crystalline Silicon, edited by R. Hull (INSPEC, London, 1999), p. 663.
7. B. Pajot, H. Compain, J. Lerouille, and B. Clerjand, Physica B & C 117B&118B, 110 (1983).
8. W. Götz, G. Pensl, and W. Zulehner, Phys. Rev. B 46, 4312 (1992).
9. J. C. Mikkelsen, in Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelson, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Mater. Res. Soc. Symp. Proc. No. 59 (Materials Research Society, Pittsburgh, 1986), p. 19.
10. U. Gösele and T. Y. Tan, Appl. Phys. A: Solids Surf. A28, 79 (1982).
11. D. Åberg, B. G. Svensson, T. Hallberg, and J. L. Lindström, Phys. Rev. B 58, 12 944 (1998).
12. L. I. Murin and V. P. Markevich, in Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic, Dordrecht, The Netherlands, 1996) p. 329.
13. R. C. Newman, in Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic, Dordrecht, The Netherlands, 1996) p. 19.
14. R. C. Newman, Mater. Sci. Eng., B 36, 1 (1996).
15. M. P. Guse and R. Kleinhenz, J. Appl. Phys. 72, 4615 (1992).
16. W. Götz, G. Pensl, W. Zulehner, R. C. Newman, and S. A. McQuaid, J. Appl. Phys. 84, 3561 (1998).
17. V. V. Emtsev, B. A. Andreev, A. Misiuk, W. Jung, and K. Schmalz, Appl. Phys. Lett. 71, 264 (1997).
18. M. Claybourn and R. C. Newman, Appl. Phys. Lett. 51, 2197 (1987).
19. S. A. McQuaid, M. J. Binns, C. A. Londos, J. H. Tucker, A. R. Brown, and R. C. Newman, J. Appl. Phys. 77, 1427 (1995).
20. V. P. Markevich, L. F. Makarenko, and L. I. Murin, Phys. Status Solidi A 97, K1 73 (1986).
21. T. Hallberg and J. L. Lindström, Mater. Sci. Eng., B B36, 13 (1996).
22. W. Kaiser, H. L. Frisch, and H. Reiss, Phys. Rev. 112, 1546 (1958).
23. C. A. Londos, M. J. Binns, A. R. Brown, S. A. McQuaid, and R. C. Newman, Appl. Phys. Lett. 62, 1525 (1993).
24. Y. J. Lee and R. M. Nieminen, Comput. Phys. Commun. 142, 305 (2001).
25. Y. J. Lee, J. von Boehm, M. Pesola, and R. M. Nieminen, Phys. Rev. B 65, 085205 (2002).
26. M. Pesola, Y. J. Lee, J. von Boehm, M. Kaukonen, and R. M. Nieminen, Phys. Rev. Lett. 84, 5343 (2000).
27. L. C. Snyder, J. W. Corbett, P. Deák, and R. Wu, in Defects in Electronic Materials, edited by M. Stavola, S. J. Pearton, and G. Davies, Mater. Res. Soc. Symp. Proc. No. 104 (Materials Research Society, Pittsburgh, 1988), p. 179.
28. Y. J. Lee, J. von Boehm, M. Pesola, and R. M. Nieminen, Phys. Rev. Lett. 86, 3060 (2001).
29. Y. J. Lee, J. von Boehm, and R. M. Nieminen, Appl. Phys. Lett. 79, 1453 (2001). Note that in the caption of Fig. 3 "1.0" should be replaced by "1.8."
30. Y. J. Lee and R. M. Nieminen, Defect and Diffusion Forum (Scitec Publications, Switzerland, 2001), Vols. 194-199, p. 261.
31. T. R. Waite, Phys. Rev. 107, 463 (1957).
32. R. A. Alberty, Physical Chemistry (Wiley, New York, 1983).
33. M. Stavola, J. R. Patel, L. C. Kimerling, and P. E. Freeland, Appl. Phys. Lett. 42, 73 (1983).
34. M. Pesola, J. von Boehm, and R. M. Nieminen, Phys. Rev. Lett. 82, 4022 (1999).
35. T. Hallberg, J. L. Lindström, L. I. Murin, and V. P. Markevich, Mater. Sci. Forum 258-263, 361 (1997).
36. L. I. Murin, T. Hallberg, V. P. Markevich, and J. L. Lindström, Phys. Rev. Lett. 80, 93 (1998).
37. S. Öberg, C. P. Ewels, R. Jones, T. Hallberg, J. L. Lindström, L. I. Murin, and P. R. Briddon, Phys. Rev. Lett. 81, 2930 (1998).
38. V. V. Emtsev (private communication).
39. H. Takeno, Y. Hayamizu, and K. Miki, J. Appl. Phys. 84, 3113 (1998).
40. W. Bergholz, J. L. Lutchison, and P. Pirouz, J. Appl. Phys. 58, 3419 (1985).
41. S. A. McQuaid, B. K. Johnson, D. Gambaro, R. Falster, M. J. Ashwin, and J. H. Tucker, J. Appl. Phys. 86, 1878 (1999).
42. S.-T. Lee and P. Fellinger, Appl. Phys. Lett. 49, 1793 (1986).