Second-order generation of point defects in highly irradiated float zone silicon - Annealing studies

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 578-582

  Pintilie, I ^a,b   Fretwurst, E ^b   Kramberger, G ^c   Lindstroem, G ^b   Li, Z ^d   Stahl, J ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF HAMBURG   (Germany)

^c DESY   (Germany)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Annealing of point defects; Divacancy oxygen complex; TSC

Indexed keywords

ANNEALING; COMPLEXATION; CONCENTRATION (PROCESS); DISSOCIATION; ELECTRON IRRADIATION; GAMMA RAYS; ISOTHERMS; PARAMAGNETIC RESONANCE; POINT DEFECTS; THERMODYNAMIC STABILITY;

DIVACANCY-OXYGEN COMPLEXES; THERMALLY STIMULATED CURRENT (TSC);

SILICON;

EID: 0346686002     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.131     Document Type: Conference Paper

References (12)

1. Pintilie I., Fretwurst E., Lindstroem G., Stahl J. Appl. Phys. Lett. 81(1):2002;165.
2. Pintilie I., Fretwurst E., Lindstroem G., Stahl J. Appl. Phys. Lett. 82(13):2003;2169.
3. Davies G., Lighttowlers E.C., Newman R.C., Oates A.S. Semic. Sci. Technol. 2:1987;524.
4. MacEvoy B., Hall G. Mater. Sci. Semicon. Process. 3:2000;243.
5. Lee H., Corbett J. Phys. Rev. B. 13(6):1976;2653.
6. Lee Y.H., Bilash T.D., Corbett J. Radiat. Eff. 29:1976;7.
7. Trauwaert M.A., Vanhellemont J., Maes H.E., Van Bavel A.M., Langouche G., Clauws P. Appl. Phys. Lett. 66(22):1995;3056.
8. Monakhov E.V., Avset B.S., Hallen A., Svensson B.G. Phys. Rev. B. 65:2002;233207.
9. Barcz A., Zielinski M., Nossarzewska E., Lindström G. Appl. Surf. Sci. 203-204:2003;396.
10. Pintilie I., Pintilie L., Moll M., Fretwurst E., Lindström G. Appl. Phys. Lett. 78(4):2001;550.
11. Pintilie I., Tivarus C., Pintilie L., Moll M., Fretwurst E., Lindström G. Nucl. Instrum. Methods A. 476:2002;652.
12. Pesola M., von Boehm J., Matila T., Niemen R.M. Phys. Rev. B. 60:1999;11449.