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Volumn 102, Issue 1-3, 2003, Pages 339-343

Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T = 450-650 °C under hydrostatic pressure

Author keywords

Absorption; Heat treatment; High pressure; Neutron irradiation; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HYDROSTATIC PRESSURE; INFRARED RADIATION; LIGHT ABSORPTION; NEUTRON IRRADIATION;

EID: 0042431929     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00615-3     Document Type: Conference Paper
Times cited : (10)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.