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Volumn 102, Issue 1-3, 2003, Pages 339-343
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Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T = 450-650 °C under hydrostatic pressure
a b c a a,d b
b
Department of Physics
*
(Greece)
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Author keywords
Absorption; Heat treatment; High pressure; Neutron irradiation; Silicon
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Indexed keywords
ANNEALING;
CRYSTAL DEFECTS;
CRYSTAL GROWTH FROM MELT;
HYDROSTATIC PRESSURE;
INFRARED RADIATION;
LIGHT ABSORPTION;
NEUTRON IRRADIATION;
THERMAL DOUBLE DONORS (TDD);
SEMICONDUCTING SILICON;
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EID: 0042431929
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(02)00615-3 Document Type: Conference Paper |
Times cited : (10)
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References (18)
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