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Volumn 42, Issue 2 A, 2003, Pages
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High-k gate dielectric prepared by low-temperature wet oxidation of ultrathin metal nitride directly deposited on silicon
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Author keywords
Low te mperature wet oxidation; MOS gate dielectric; TaN; TaOxNy; TiN; TiOxNy
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Indexed keywords
CAPACITANCE;
CURRENT DENSITY;
DIELECTRIC MATERIALS;
INTERFACES (MATERIALS);
MOS DEVICES;
NITROGEN;
OXIDATION;
TANTALUM COMPOUNDS;
THERMODYNAMIC STABILITY;
TITANIUM NITRIDE;
ULTRATHIN FILMS;
X RAY PHOTOELECTRON SPECTROSCOPY;
LEAKAGE CURRENT DENSITY;
LOW TEMPERATURE WET OXIDATION;
METAL OXIDE SEMICONDUCTOR GATE DIELECTRIC;
METAL OXYNITRIDES;
ULTRATHIN METAL NITRIDE;
NITRIDES;
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EID: 0037318817
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.42.L102 Document Type: Letter |
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Times cited : (7)
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References (12)
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