Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 604-610

  Nastasi, Michael ^a   Höchbauer, Tobias ^a   Verda, Raymond D ^a   Misra, Amit ^a   Lee, Jung Kun ^a   Mayer, James W ^b   Lau, S S ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ion beam analysis; Ion implantation; Ion cut

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BACKSCATTERING; CHEMICAL BONDS; CRYSTAL DEFECTS; HYDROGEN; ION BEAMS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC RECOIL DETECTION; ION BEAM ANALYSIS; ION CHANNELING; ION-CUT;

ION IMPLANTATION;

EID: 2442583010     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.128     Document Type: Conference Paper

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