Understanding hydrogen silsesquioxane-based dielectric film processing

Solid State Technology

Volumn 41, Issue 5, 1998, Pages 99-105

  Loboda, Mark J ^a   Toskey, George A ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; METALLIZING; PERMITTIVITY; PLASTIC FILMS; RESINS;

HYDROGEN SILSESQUIOXANE; INTERLAYER DIELECTRICS (ILD);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032058086     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (16)

1. B.Y. Ahlburn, et al., "Hydrogen Silsesquioxane-based Flowable Oxide as an Element in the Interlevel Dielectric for 0.5 Micron ULSI Circuits," Proc. of 1st Dielectrics for ULSI/VLSI Multilevel Interconnections Conference, p. 36, 1995.
2. B.K. Hwang, et al., "New Spin-on Glass Based on Hydrogen Silsesquioxane for Inter-metal Planarization," Proc. 12th ULSI/VLSI Multilevel Interconnections Conference, p. 113, 1995.
3. S.-P. Jeng, et al., "Highly Porous Interlayer Dielectric for Interconnect Capacitance Reduction," VLSI Technology Symposium Digest, p. 61, 1995.
4. 2 and Hydrogen Silsesquioxane for Capacitance Reduction," Proc. 13th ULSI/VLSI Multilevel Interconnections Conference, p. 23, 1996.
5. C.L. Frye, W.T. Collins, "The Oligomeric Silsesquioxanes," J. Amer. Chem. Soc. 92, p. 5586, 1970.
6. P. Bornhauser, G. Calzaferri, "Ring Opening Vibrations of Spherosiloxanes," J. Phys. Chem., 100, p. 2035, 1996.
7. G. Lucovsky, et al., "Oxygen-Bonding Environments in Glow-Discharge-Deposited Amorphous Silicon-Hydrogen Alloys," Phys. Rev. B, 28 (6), p. 3225, 1983.
8. C. Chiang, et al., "Defects Study on Spin-On Glass Planarization Technology," Proc. 4th ULSI/VLSI Multilevel Interconnections Conference, p. 404, 1987.
9. 2 Film," IEEE Trans. on Elect. Devices, 40, pp. 1682-1687, 1993.
10. J.N. Bremmer, Y. Liu, K.G. Gruszynski, F.C. Dall, "Cure of FOx Flowable Oxide for Intermetal Dielectric Applications," Proc. 3rd Dielectrics for ULSI/VLSI Multilevel Interconnections Conference, p. 333, 1997.
11. M.J. Loboda, I. Goswami, "PECVD Oxide Cap Integration for Optimal HSQ Performance," Proc. 14th ULSI/VLSI Multilevel Interconnections Conference, p. 632, 1997.
12. M.J. Loboda, et al., "Chip Scale Packaging with High Reliability for MCM Applications," Proc. of the Fifth ISHM Int'l Conf. on Multichip Modules, pp. 257-262, 1996.
13. J. Waeterloos, et al., "Integrating a Hydrogen Silsesquioxane Spin-On Dielectric in a Quarter-Micron Technology," Dielectrics for ULSI Multilevel Interconnections Conference, p. 310, 1997.
14. D.B. Nguyen, et al., "Reliability Evaluation of Low-k Dielectrics for Sub-Micron Interconnection Applications," 2nd Int'l Symp. on Low and High Dielectric Constant Materials, 1997 Spring Meet of the Electrochem Soc, Montreal.
15. E. Sabin, G. Albrecht, "Reliability Concerns Integrating Hydrogen Silsesquioxane Into a BiCMOS Process," 2nd Int'l Symp. on Low and High Dielectric Constant Materials, 1997 Spring Meet of the Electrochem Soc, Montreal.
16. E. Korczynski, "Low-k Dielectric Integration Cost Modeling," Solid State Technology, pp. 123-128, October 1997.