Angular dependent energy loss of 0.8-2.0 MeV He ions channeled along the Si〈1 0 0〉 direction

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 132-136

  Azevedo, G D M ^a   Behar, M ^a   Dias, J F ^a   Grande, P L ^a   Dos Santos, J H R ^a   Stoll, R ^b   Klatt, Chr ^b   Kalbitzer, S ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ENERGY DISSIPATION; HELIUM; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON WAFERS; SINGLE CRYSTALS;

CHANNELING ENERGY LOSS; ELECTRONIC STOPPING POWER;

ION BOMBARDMENT;

EID: 0032017034     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00834-3     Document Type: Article

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