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Materials Chemistry and Physics

Volumn 77, Issue 2, 2003, Pages 377-383

The effect of contact resistance on current crowding and electromigration in ULSI multi-level interconnects

(4) Huang, J S a Yeh, Everett C C b Zhang, Z B c Tu, K N b

a Agere Systems (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c North Carolina State University (United States)

Author keywords

Electromigration; Etch stop; ULSI

Indexed keywords

ELECTRONS; ETCHING; MORPHOLOGY; THIN FILMS;

ATOMIC FLUX;

ELECTROMIGRATION;

EID: 0037437432 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(02)00018-4 Document Type: Article

Times cited : (16)

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