Compatibility of candidate high permittivity gate oxides with front and backend processing conditions

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 36-41

  Kingon, A I ^a   Maria, J P ^a   Wicaksana, D ^a   Hoffman, C ^a   Stemmer, S ^b  

^a North Carolina State University   (United States)

^b Rice University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; MOS CAPACITORS; PERMITTIVITY; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE; THERMODYNAMIC STABILITY;

AFTER HIGH TEMPERATURE; ALTERNATIVE DIELECTRICS; BACK-END PROCESSING; ELEVATED TEMPERATURE; HIGH PERMITTIVITY DIELECTRIC; INTERCONNECT STRUCTURES; OPTIMUM PROCESS CONDITIONS; SEMICONDUCTOR INDUSTRY ASSOCIATIONS;

GATE DIELECTRICS;

EID: 84954143377     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967543     Document Type: Conference Paper

References (15)

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