Growth behavior of high k LaAlO 3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Applied Surface Science

Volumn 250, Issue 1-4, 2005, Pages 14-20

  Shao, Qi Yue ^a   Li, Ai Dong ^a   Cheng, Jin Bo ^a   Ling, Hui Qin ^a   Wu, Di ^a   Liu, Zhi Guo ^a   Bao, Yong Jun ^a   Wang, Mu ^a   Ming, Nai Ben ^a   Wang, Cathy ^b   Zhou, Hong Wei ^b   Nguyen, Bich Yen ^c  

^a NANJING UNIVERSITY   (China)

^b MOTOROLA INC   (United States)

^c Advanced Products R and D Laboratory   (United States)

Author keywords

Gate dielectric; Growth mechanism; LaAlO 3 film; MOCVD

Indexed keywords

ACTIVATION ENERGY; ALUMINA; COMPOSITION; FILM GROWTH; GATES (TRANSISTOR); LANTHANUM COMPOUNDS; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

GATE DIELECTRICS; GROWTH MECHANISM; LAALO3(ALO) FILMS; MASS TRANSPORT CONTROL;

DIELECTRIC FILMS;

EID: 23844477265     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.12.037     Document Type: Article

References (25)

1. Semiconductor Industry Association, the International Technology Roadmap for Semiconductors, 2002.
2. D.A. Buchanan IBM J. Res. Dev. 43 1999 245
3. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
4. K.J. Hubbard, and D.G. Schlom J. Mater. Res. 11 1996 2757
5. W.K. Chim, T.H. Ng, B.H. Koh, W.K. Choi, J.X. Zheng, C.H. Tung, and A.Y. Du J. Appl. Phys. 93 2003 4788
6. H. Harris, K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipsshidze, S. Nikishin, S. Ganopadhyay, and H. Temkin Appl. Phys. Lett. 81 2002 1065
7. S. Stemmer, J.P. Maria, and A.I. Kingon Appl. Phys. Lett. 79 2001 102
8. A. Dimoulas, G. Vellianitis, A. Travlos, V.L. Sougleridis, and A.G. Nassiopoulou J. Appl. Phys. 92 2002 426
9. J.P. Chang, and Y.S. Lin Appl. Phys. Lett. 79 2001 3824
10. G. Lucovsky, and G.B. Rayner Appl. Phys. Lett. 77 2000 2912
11. C. Zhao, O. Richard, H. Bender, M. Caymax, S. De Gendt, M. Heyns, E. Young, G. Roebben, O.V.D. Biest, and S. Haukka Appl. Phys. Lett. 80 2002 2374
12. A. Chin, Y.H. Wu, S.B. Chen, C.C. Liao, and W.J. Chen Tech. Dig. VLSI Symp. 2000 16
13. M. Nieminen, M. Putkonon, and L. Niisitio Appl. Surf. Sci. 174 2001 155
14. Y. Lu, J. Zheng, M.C. Golomb, F. Wang, H. Jiang, and J. Zhao Appl. Phys. Lett. 74 1999 3764
15. B.E. Park, and H. Ishiwara Appl. Phys. Lett. 79 6 2001 806
16. X.B. Lu, Z.G. Liu, Y.P. Wang, Y. Yang, X.P. Wang, H.W. Zhou, and B.Y. Nguyen J. Appl. Phys. 94 2003 1229
17. W.F. Xiang, H.B. Lu, L. Yan, H.Z. Guo, L.F. Liu, Y.L. Zhou, G.Z. Yang, J.C. Jiang, H.S. Cheng, and Z.H. Chen J. Appl. Phys. 93 2003 533
18. C. Isobe, T. Ami, K. Hironaka, K. Watanabe, M. Sugiyama, N. Nagel, K. Katori, Y. Ikeda, C.D. Gutleben, M. Tanaka, H. Yamoto, and H. Yagi Integr. Ferroelectr. 14 1997 95
19. J.Y. Kim, M.S. Huang, Y.H. Kim, H.J. Kim, and Y. Lee J. Appl. Phys. 90 2001 2469
20. J.P. Chang, and Y.S. Lin J. Appl. Phys. 90 2001 2964
21. G.L. Bertrand, G. Caboche, and L.C. Dufour Solid-State Ion. 129 2000 219
22. R.C. Smith, T.Z. Ma, N. Hoilien, L.Y. Tsung, and M.J. Bevan Adv. Mater. Opt. Electron. 10 2000 105
23. Q.Y. Shao, A.D. Li, H.Q. Ling, D. Wu, Y. Wang, Z. Feng, M. Wang, Z.G. Liu, and N.B. Ming Microelectron. Eng. 66 2003 842
24. J.B. Cheng, A.D. Li, H.Q. Ling, Q.Y. Shao, D. Wu, Y. Wang, Z. Feng, M. Wang, Z.G. Liu, and N.B. Ming Appl. Surf. Sci. 233 2004 91
25. R.C. Smith, N. Hoilien, C.J. Tayer, T. Ma, S.A. Campbell, J.T. Roberts, M. Copel, D.A. Buchanan, M. Gribelyuk, and W.L. Gladfelter J. Electrochem. Soc. 147 2000 3742