Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2566-2568

  Davies, S ^a   Huang, T S ^a   Gass, M H ^a   Papworth, A J ^a   Joyce, T B ^a   Chalker, P R ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BAND STRUCTURE; CARRIER CONCENTRATION; CRYSTAL SYMMETRY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; PLASMA ETCHING; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; VACUUM;

CANTILEVERS; DIFFRACTION PATTERNS; EPITAXIAL COLUMNS; ON-SURFACE CRACKING; PLASMON ENERGY;

GALLIUM NITRIDE;

EID: 2342624554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695196     Document Type: Article

References (24)

1. S. J. Pearton, C. R. Abernathy, F. Ren, J. R. Lothian, P. W. Wisk, and A. Katz, J. Vac. Sci. Technol. A 11, 1772 (1993).
2. C. R. Eddy, Jr. and B. Molnar, J. Electron. Mater. 28, 314 (1998).
3. A. R. Stonas, P. Kodozy, H. Marchand, P. Fini, S. P. Denbaars, U. K. Mishra, and E. L. Hu, Appl. Phys. Lett. 77, 2610 (2000).
4. A. R. Stonas, N. C. McDonald, K. L. Turner, S. P. Denbaars, and E. L. Hu, J. Vac. Sci. Technol. B 19, 2838 (2001).
5. A. N. Cleland, M. Porrhistic, and I. Ferguson, Appl. Phys. Lett. 79, 2070 (2001).
6. A. Ohtani, K. S. Stevens, and R. Beresford, Appl. Phys. Lett. 65, 61 (1994).
7. Z. Yang, F. Guarin, I. W. Tao, W. I. Wang, and S. S. Iyer, J. Vac. Sci. Technol. B 13, 789 (1995).
8. U. Rossner, J. L. Rouviere, A. Bourret, and A. Barski, Mater. Res. Soc. Symp. Proc. 395, 145 (1995).
9. M. A. Sánchez-García, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Muñz, and R. Beresford, J. Cryst. Growth 183, 23 (1998).
10. E. S. Hellman, D. N. E. Buchanan, and C. H. Chen, MRS Internet J. Nitride Semicond. Res. 3, 43 (1998).
11. H. P. D. Schenk, G. D. Kipshidze, V. B. Lebedev, S. Shokhovets, R. Goldhahn, J. Kraüßlich, A. Fissel, and W. Richter, J. Cryst. Growth 201, 359 (1999).
12. F. Semond, B. Damilano, S. Vezian, N. Grandjean, M. Leroux, and J. Massies, Appl. Phys. Lett. 75, 82 (1999).
13. F. Semond, P. Lorenzini, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 335 (2001).
14. J. Steckl, J. Devrajan, C. Tran, and R. A. Stall, Appl. Phys. Lett. 69, 2264 (1996).
15. J. W. Yang, C. J. Sun, Q. Chen, M. Z. Anwar, M. Asif Khan, S. A. Nikishin, G. A. Seryogin, A. V. Osinsky, L. Chemyak, H. Temkin, Chimin Hu, and S. Mahajan, Appl. Phys. Lett. 69, 3566 (1996).
16. N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X. Zhang, and D. H. Rich, Appl. Phys. Lett. 71, 3569 (1997).
17. T. S. Huang, T. B. Joyce, R. T. Murray, and P. R. Chalker, J. Phys. D 35, 620 (2002).
18. J. M. Zavada, C. R. Abernathy, S. J. Pearton, J. D. McKenzie, J. R. Mileham, R. G. Wilson, and R. N. Schwartz, Solid-State Electron. 41, 353 (1997).
19. H. Siedel, L. Csepregi, A. Heuberger, and H. Baumgartel, J. Electrochem. Soc. 137, 11 (1990).
20. N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X. Zhang, and D. H. Rich, Appl. Phys. Lett. 71, 3569 (1997).
21. R. F. Egerton, Electron Energy-Loss Spectroscopy in the Electron Microscope (Plenum, New York, 1986), Chap. 5.
22. S. C. Binari, J. M. Redwing, G. Kiener, and W. Kruppa, Electron. Lett. 33, 242 (1997).
23. S. N. Mohammad, A. Salvador, and H. Morkoç, Proc. IEEE 83, 1306 (1995).
24. B. Daudin, J. L. Rouvierre, and M. Arley, Appl. Phys. Lett. 69, 2480 (1996).