Radiation-induced defects and their transformations in oxygen-rich germanium crystals

Physica Status Solidi Conferences

Volumn , Issue 2, 2003, Pages 702-706

  Markevich, V P ^a,e   Litvinov, V V ^b   Dobaczewski, L ^c   Lindstrom J L ^d   Murin, L I ^e   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c INSTITUTE OF PHYSICS   (Poland)

^d LUND UNIVERSITY   (Sweden)

^e INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; CRYSTAL DEFECTS; ELECTRONS; GAMMA RAYS; GERMANIUM; INFRARED RADIATION; MOLECULAR VIBRATIONS; OXYGEN; COBALT; DEEP LEVEL TRANSIENT SPECTROSCOPY; LIGHT ABSORPTION; STRETCHING;

INFRARED ABSORPTION; RADIATION-INDUCED DEFECTS; CHARGE STATE; DEFECTS INDUCED; FAST ELECTRONS; GERMANIUM CRYSTALS; HALL EFFECT MEASUREMENT; NEGATIVELY CHARGED; RADIATION INDUCED DEFECTS; STRETCHING VIBRATIONS;

CRYSTALS; OXYGEN VACANCIES;

EID: 1242310037     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306214     Document Type: Conference Paper

References (18)

1. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961).
2. R. E. Whan, Appl. Phys. Lett. 6, 221 (1965); Phys. Rev. 140, A690 (1965).
3. R. E. Whan, Appl. Phys. Lett. 6, 221 (1965); Phys. Rev. 140, A690 (1965).
4. N. Fukuoka, H. Saito, and Y. Kambe, Jpn. J. Appl. Phys. 22, L353 (1983).
5. V. Nagesh and J. W. Farmer, J. Appl. Phys. 03, 1549 (1987).
6. J. Fage-Pedersen, A. Nylansted Larsen, and A. Mesli, Phys. Rev. B 62, 10116 (2000).
7. L. A. Goncharov, V. V. Emtsev, T. V. Mashovets, and S. M. Ryvkin, Fiz. Tekh. Poluprovodn. 6, 424 (1972) [Sov. Phys. Semicond. 6, 369 (1972)].
8. L. A. Goncharov, V. V. Emtsev, T. V. Mashovets, and S. M. Ryvkin, Fiz. Tekh. Poluprovodn. 6, 424 (1972) [Sov. Phys. Semicond. 6, 369 (1972)].
9. V. V. Litvinov, V. I. Urenev, and V. A. Shershel, Fiz. Tekh. Poluprovodn. 17, 1623 (1983) [Sov. Phys. Semicond. 17, 1033 (1983)].
10. V. V. Litvinov, V. I. Urenev, and V. A. Shershel, Fiz. Tekh. Poluprovodn. 17, 1623 (1983) [Sov. Phys. Semicond. 17, 1033 (1983)].
11. V. V. Litvinov, V. I. Urenev, and V. A. Shershel, Fiz. Tekh. Poluprovodn. 18, 1131 (1984) [Sov. Phys. Semicond. 18, 707 (1984)].
12. V. V. Litvinov, V. I. Urenev, and V. A. Shershel, Fiz. Tekh. Poluprovodn. 18, 1131 (1984) [Sov. Phys. Semicond. 18, 707 (1984)].
13. V. V. Litvinov, L. I. Murin, J. L. Lindström, V. P. Markevich, and A. N. Petuh, in: Proc. of the 4th Intern. Conf. on Interaction of Radiation with Solids, edited by V. M. Anischik (Minsk, Belarus, 2001), p. 173.
14. P. Vanmeerbeek and P. Clauws, Phys. Rev. B 64, 245201 (2001).
15. V. V. Litvinov, L. I. Murin, J. L. Lindström, V. P. Markevich, and A. N. Petuh, Fiz. Tekh. Poluprovodn. 36, 658 (2002) [Semiconductors 36, 621 (2002)].
16. V. V. Litvinov, L. I. Murin, J. L. Lindström, V. P. Markevich, and A. N. Petuh, Fiz. Tekh. Poluprovodn. 36, 658 (2002) [Semiconductors 36, 621 (2002)].
17. E. I. Millett, L. S. Wood, and G. Bew, Br. J. Appl. Phys. 16, 1593 (1965).
18. L. Dobaczewski, P. Kaczor, I. D. Hawkins, and A. R. Peaker, J. Appl. Phys. 76, 194 (1994).