Oxygen-related radiation-induced defects in SiGe alloys

Journal of Physics Condensed Matter

Volumn 15, Issue 39, 2003, Pages

  Markevich, V P ^a   Peaker, A R ^a   Murin, L I ^b   Abrosimov, N V ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPLEXATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON TRAPS; ELECTRONIC STRUCTURE; ENTHALPY; IONIC CONDUCTION IN SOLIDS; IONIZATION; LATTICE CONSTANTS; OXYGEN; RADIATION;

CAPACITANCE TRANSIENT TECHNIQUE; CONDUCTION BAND; OXYGEN RELATED RADIATION INDUCED DEFECTS;

SILICON ALLOYS;

EID: 0142103227     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/39/008     Document Type: Article

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