Hydrogen-oxygen interaction in silicon at around 50 °C

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 2988-2993

  Markevich, V P ^a,b   Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000894998     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367054     Document Type: Article

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