Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 475-479

  Watling, J R ^a   Yang, L ^a   Borici M ^a   Barker, J R ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

degeneracy; Monte Carlo; screening; strained Si

Indexed keywords

MONTE CARLO METHODS; SCREENING; SEMICONDUCTOR DOPING;

CARRIER STATISTICS; DEGENERACY; EFFECTIVE DENSITY OF STATE; ENSEMBLE MONTE CARLO; FERMI-DIRAC DISTRIBUTION; NONEQUILIBRIUM TRANSPORT; SIMULATION TECHNIQUE; STRAINED-SI;

MOSFET DEVICES;

EID: 14844334514     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011474.37180.33     Document Type: Article

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