Effect of gate oxide breakdown on RF device and circuit performance

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 1-4

  Yang, Hong ^a   Yuan, J S ^a   Xiao, Enjun ^a  

^a University of Central Florida   (United States)

Author keywords

Gate oxide breakdown

Indexed keywords

CIRCUIT SIMULATION; CIRCUIT THEORY; GATES (TRANSISTOR); LOW NOISE AMPLIFIERS; MOS DEVICES; NOISE FIGURE; RECONFIGURABLE HARDWARE; SCATTERING PARAMETERS;

CIRCUIT PERFORMANCE; EQUIVALENT CIRCUIT MODEL; GATE OXIDE BREAKDOWN; MOSFETS; NMOS DEVICES; NMOSFET; NON-ZERO PROBABILITY; RF DEVICES;

MOSFET DEVICES;

EID: 84955325122     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197711     Document Type: Conference Paper

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