A novel approach to quantum point contact for post soft breakdown conduction

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 305-308

  Cester, A ^a   Bandiera, L ^a   Sune J ^b   Boschiero, L ^a   Ghidini, G ^c   Paccagnella, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; POINT CONTACTS;

QUANTUM POINT CONTACT; SOFT BREAKDOWN CONDUCTION;

MOS CAPACITORS;

EID: 0035718183     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979490     Document Type: Article

References (8)