Low-pressure nanoimprint lithography

Nano Letters

Volumn 4, Issue 4, 2004, Pages 633-637

  Khang, Dahl Young ^a   Kang, Hyewon ^a   Kim, Tae Il ^a   Lee, Hong H ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SOLVENT;

ANALYTIC METHOD; ARTICLE; ENERGY; FILM; HYPOBARISM; LOW PRESSURE NANOIMPRINT LITHOGRAPHY;

EID: 2342484965     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049887d     Document Type: Article

References (33)

1. (a) Chou, S. Y.; Krauss, P. R.; Renstrom, P. J. Appl. Phys. Lett. 1996, 67, 3114.
2. (b) Chou, S. Y.; Krauss, P. R.; Renstrom, P. J. Science 1996, 272, 85.
3. (c) Sotomayor Torres C. M.; Zankovych S.; Seekamp J.; Kam, A. P.; Clavijo Cedeno, C.; Hoffmann, J.; Ahopelto, J.; Pfeiffer, K.; Bleidiessel, G.; Gruetzner, G.; Maximov, M. V.; Heidari, B. Mater. Sci. Eng. C 2003, 23, 23.
4. Chou, S. Y.; Krauss, P. R.; Zhang W.; Guo, L.; Zhang, L. J. Vac. Sci. Technol. B 1998, 16, 2897.
5. (a) Khang, D.-Y.; Lee, H. H. Appl. Phys. Lett. 1999, 75, 2599.
6. (b) Li, M.; Chen, L.; Zhang, W.; Chou, S. Y. Nanotechnology 2003, 14, 33.
7. Chou, S. Y. Proc. IEEE 1997, 85, 652.
8. (a) Seekamp, J.; Zankovych, S.; Helfer, A. H.; Maury, P.; Sotomayor Torres, C. M.; Bottger, G.; Liguda, C.; Eich, B.; Heidar, B.; Montelius, L.; Ahopelto, J. Nanotechnology 2002, 13, 581.
9. (b) Moon, S. D.; Lee, N. S.; Kang, S. I. J. Micromech. Microeng. 2003, 13, 98.
10. Krauss, P. R.; Chou, S. Y. Appl. Phys. Lett. 1997, 71, 3174.
11. Yu, Z.; Schablitsky, S. J.; Chou, S. Y. Appl. Phys. Lett. 1999, 74, 2381.
12. Becker, H.; Gartner, C. Rev. Mol. Biotech. 2001, 82, 89.
13. Guo, L.; Krauss, P. R.; Chou, S. Y. Appl. Phys. Lett. 1997, 71, 1881.
14. Chou, S. Y. U.S. Patent 6,309,580.
15. Jaszewski, R. W.; Schift, H.; Groning, P.; Margaritondo, G. Microelec. Eng. 1997, 35, 381.
16. Scheer, H.-C.; Schultz, H.; Hoffmann, T.; Sotomayor Torres, C. M. J. Vac. Sci. Technol. B 1998, 16, 3917.
17. (a) Khang, D.-Y.; Lee, H. H. Appl. Phys. Lett. 2000, 76, 870.
18. (b) Khang, D.-Y.; Yoon, H. S.; Lee, H. H. Adv. Mater. 2001, 13, 749.
19. Baily, T.; Choi, B. J.; Colburn, M.; Meissl, M.; Shaya, S.; Ekerdt, J. G.; Sreenavasan, S. V. J. Vac. Sci. Technol. B 2000, 18, 3572.
20. Huang, X. D.; Bao, L.-R.; Cheng, X.; Guo, L. J.; Pang, S. W.; Yee, A. F. J. Vac. Sci. Technol. B 2002, 20, 2872.
21. Resnick, P. R.; Buck, W. H. Fluoropolymers: Properties, Hougham, G., Cassidy, P. E., Johns, K., Davidson, T., Eds.; Kluwer Academic: New York, 1999; Vol. 2
22. Xia, Y.; Whitesides, G. M. Angew. Chem., Int. Ed. Engl. 1998, 37, 550.
23. (a) Ferguson, G. S.; Chaudhury, M. K.; Sigal, G. B.; Whitesides, G. M. Science 1991, 253, 776.
24. (b) Kim, C.; Burrows, P. E.; Forrest, S. R. Science 2000, 288, 831.
25. (c) Loo, Y.-L.; Willet, R. L.; Baldwin, K. W.; Rogers, J. A. J. Am. Chem. Soc. 2002, 124, 7654.
26. (d) Kim, C.; Shtein, M.; Forrest, S. R. Appl. Phys. Lett. 2002, 80, 4051.
27. (e) Loo, Y.-L.; Willet, R. L.; Baldwin, K. W.; Rogers, J. A. Appl. Phys. Lett. 2002, 81, 562.
28. (f) Matsui, S.; Igaku, Y.; Ishigaki, H.; Fujita, J.; Ishida, M.; Ochiai, Y.; Namatsu, N.; Komuro, M. J Vac. Sci. Technol. B 2003, 21, 688.
29. (g) Loo, Y.-L.; Lang, D. V.; Rogers, J. A.; Hsu, J. W. P. Nano Lett. 2003, 3, 913.
30. (h) Zaumseil, J.; Meitle, M. A.; Hsu, J. W. P.; Acharya, B. R.; Baldwin, K. W.; Loo, Y.-L.; Rogers, J. A. Nano Lett. 2003, 3, 1223.
31. -4, showing that the film is more flexible than the typical hard mold material of silicon wafer by 4 orders of magnitude.
32. The ZnO template was kindly provided by professor B. H. Sohn at Pohang University of Science and Technology, Korea.
33. This preliminary result was obtained without any optimization of process conditions. For Figure 4b, the imprint was carried out at 170 °C, 2-3 bar for 60 min, where the rather long imprint time was deliberately chosen to rule out the effect of unoptimized process conditions on the nanoscale patterning capability of the thin film Teflon mold.