Nanoscale silicon field effect transistors fabricated using imprint lithoqraphy

Applied Physics Letters

Volumn 71, Issue 13, 1997, Pages 1881-1883

  Guo, Lingjie ^a,b   Krauss, Peter R ^a,c   Chou, Stephen Y ^a,b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b PRINCETON UNIVERSITY   (United States)

^c SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; FABRICATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; POLYMETHYL METHACRYLATES; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

NANOIMPRINT LITHOGRAPHY; SILICON FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0031223615     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119426     Document Type: Article

References (5)

1. S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Appl. Phys. Lett. 67, 3114 (1995).
2. S. Y. Chou, P. R. Krauss, and P. J. Renstrom. Science 85, 272 (1996).
3. S. Y. Chou, P. R. Krauss, and P. J. Renstrom, J. Vac. Sci. Technol, B 14, 4129 (1996).
4. E. Leobandung, L. J. Guo, and S. Y. Chou, J. Vac. Sci. Technol. B 13, 2865 (1995).
5. See. for example, Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, edited by H. Grabet and M. H. Devoret (Plenum, New York, 1992).