Polysilicon encapsulated local oxidation of silicon for deep submicron lateral isolation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1325-1329

  Badenes, Gonçal ^a   Rooyackers, Rita ^a   De Wolf, Ingrid ^a   Deferm, Ludo ^a  

^a IMEC   (Belgium)

Author keywords

CMOS; Deep submicron; Lateral isolation; LOCOS

Indexed keywords

EID: 0007918337     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1325     Document Type: Article

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