Characteristics of low-energy BF2- or as-implanted layers and their effect on the electrical performance of 0.15-μm MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 3, 1998, Pages 701-709

  Nishida, Akio ^a   Murakami, Eiichi ^a   Kimura, Shin'ichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BORON COMPOUNDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS;

SHEET RESISTANCE;

MOSFET DEVICES;

EID: 0032028280     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.661231     Document Type: Article

References (14)

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