SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 588, Issue 1-3, 2005, Pages 108-116

Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor

(3) Wang, Wenwu a Nabatame, Toshihide b Shimogaki, Yukihiro a

a UNIVERSITY OF TOKYO (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Chemical vapor deposition; Hafnium nitride; Metal insulator interfaces; TDEAHf precursor

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); SILICA;

HAFNIUM NITRIDE; INTERLAYER GROWTH; METAL-INSULATOR INTERFACES; TETRAKIS-DIETHYLAMIDO HAFNIUM (TDEAHF); STACK GROWTH; TDEAHF PRECURSOR;

HAFNIUM COMPOUNDS; THIN FILMS;

EID: 22344438722 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.05.035 Document Type: Article

Times cited : (21)

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