Influence of sputtering parameters on the formation process of high-quality and low-resistivity HfN thin film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 2097-2102

  Shinkai, Satoko ^a   Sasaki, Katsutaka ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AES; High quality HfN film; Low resistivity; Single oriented growth; Stoichiometric compound; Ultrahigh vacuum sputtering system; XPS

Indexed keywords

EID: 0013416786     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2097     Document Type: Article

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