An advanced high-k transistor utilizing metal-organic precursors in an ALD deposition of hafnium oxide and hafnium silicate with ozone as oxidizer

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 25-30

  Gutt, J ^a   Brown, G A ^a   Senzaki, Yoshi ^b   Park, Seung ^b  

^a SEMATECH   (United States)

^b Aviza Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; MOS DEVICES; OZONE; PERMITTIVITY; PRESSURE EFFECTS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); GATE LEAKAGES; METAL-ORGANIC PRECURSORS; OXIDANTS;

TRANSISTORS;

EID: 12744267844     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d2.4     Document Type: Conference Paper

References (10)

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10. 4